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| BUZ60B Semiconductor Data Sheet October 1998 File Number 2261.1 4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET Features * 4.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 1.500 (BUZ60 field effect transistor designed for applications such as * SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers, /Sub* Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject * Linear Transfer Characteristics 4.5A, This type can be operated directly from integrated circuits. * High Input Impedance 00V, Formerly developmental type TA17414. * Majority Carrier Device .500 Ordering Information * Related Literature hm, - TB334 "Guidelines for Soldering Surface Mount PACKAGE BRAND -Chan- PART NUMBER Components to PC Boards" BUZ60B TO-220AB BUZ60B el ower NOTE: When ordering, use the entire part number. Symbol OSD ET) /Author ) G /KeyS ords Harris emionducor, NPackaging hanJEDEC TO-220AB el ower SOURCE DRAIN OSGATE DRAIN (FLANGE) ET, O20AB) /Cretor () /DOCIN O pdfark /Pageode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ60B Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ60B 400 400 4.5 18 20 75 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 400V, VGS = 0V TJ = 125oC, VDS = 400V, VGS = 0V VGS = 20V, VDS = 0V ID = 2.5A, VGS = 10V (Figure 8) VDS = 25V, ID = 2.5A (Figure 11) VCC = 30V, ID 2.6A, VGS = 10V, RGS = 50, RL = 10. (Figures 14, 15) MIN 400 2.1 1.7 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) TYP 3 20 100 10 1.2 2.5 30 40 110 50 1.5 120 35 1.67 75 MAX 4 250 1000 100 1.500 45 60 140 65 2 180 60 UNITS V V A A nA S ns ns ns ns pF pF pF oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulsed Source to Drain Current Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL ISD ISDM VSD trr QRR TJ = 25oC, ISD = 9A, VGS = 0V TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/s, VR = 100V TC = 25oC TEST CONDITIONS MIN TYP 1.7 1.15 1000 5 MAX 4.5 18 1.50 UNITS A A V ns C 2 BUZ60B Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) Unless Otherwise Specified 6 VGS 10V 5 4 3 0.6 0.4 2 1 0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE 1 0.5 0.2 0.1 PDM 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 0.01 10-5 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 8.0V 10V 20V PD = 75W 7.5V VGS = 7.0V 8 1.5s 101 10s 100s 100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10ms 100ms DC 102 103 6 VGS = 6.5V PULSE DURATION = 80s TJ = 25oC VGS = 6.0V VGS = 5.5V VGS = 5.0V 4 2 VGS = 4.5V VGS = 4.0V 10-1 100 101 0 0 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 3 BUZ60B Typical Performance Curves IDS(ON), DRAIN TO SOURCE CURRENT (A) 10 PULSE DURATION = 80s VDS = 25V TJ = 25oC Unless Otherwise Specified (Continued) 6 5 4 3 2 1 0 7V 7.5V 8V 9V 10V 20V 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 PULSE DURATION = 80s VGS = 5V 5.5V 6V 6.5V 5 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. TRANSFER CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE () PULSE DURATION = 80s ID = 2.5A VGS = 10V 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) 50 100 150 4 rDS(ON), DRAIN TO SOURCE ON RESISTANCE 4 3 2 1 0 FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT VDS = VGS, ID = 1mA 2 1 0 -50 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 gfs, TRANSCONDUCTANCE (S) 5 4 PULSE DURATION = 80s VDS = 25V TJ = 25oC C, CAPACITANCE (nF) CISS 100 VGS = 0, f = 1MHz CISS = CGS +CGD CRSS = CGD COSS = CDS + CGS COSS CRSS 10-2 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 3 10-1 2 1 0 0 5 ID, DRAIN CURRENT (A) 10 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 4 BUZ60B Typical Performance Curves 102 ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s Unless Otherwise Specified (Continued) 15 VGS, GATE TO SOURCE VOLTAGE (V) ID = 8.3A 101 10 VDS = 80V VDS = 320V 5 TJ = 150oC 100 TJ = 25oC 10-1 0 0.5 1.0 1.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0 0 0 10 20 30 40 50 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 14. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) FIGURE 15. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 5 |
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